The use of epitaxial silicon in modern MOS and bipolar device and IC technologies is necessary in order to achieve optimum device performance and reliability.  The epitaxial silicon carrier density profile has a large effect on MOSFET V_T and sub-threshold behavior, drain-source breakdown and resistance characteristics, drain-substrate punchthrough voltage, and parasitic SCR latch-up.  Also, important MOS reliability aspects related to interface trap density and hot carrier effects and gate dielectric reliability are heavily influenced by the quality of the interface between the eptiaxial silicon and the gate dielectric.

Modern device structures require accurate and precise control of the resistivity and carrier density profile of epitaxial silicon.

SSM is a major supplier of metrology equipment to both wafer producers and semiconductor device companies with the following products:

• SSM 5400 FastGate^® Epi system for measuring depth profiles and maps non-destructively
• SSM HgCV systems for measuring profiles and maps
• SSM 2000 NanoSRP^® Spreading Resistance Profiling System

To request additional information click here or write to us at  info@ssm-inc.com.

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