APPLICATIONS - Gate

SSM’s FastGate^® Systems use a proprietary elastic probe that instantly forms an MOS gate in scribe lines and test areas and immediately provides gate and channel properties. Combined with SSM’s advanced CV/IV software, FastGate technology provides flexible analytical tools for both R&D and production engineers.

• MOS diode formed using non-damaging, non-contaminating elastic probe made
  from soft, semiconductor-compatible materials
• Elastic probe diameter only 30 nm, facilitating placement in test areas or scribe lines
• Measure gate dielectrics as thin as 0.7 nm.
• Measure SiO₂, SiON and high-k dielectrics
• Tests product or monitor wafers without wafer damage

Ultra-Thin Oxides and High-k Dielectrics
• Equivalent Oxide Thickness (EOT)
• Capacitive Effective Thickness (CET)
• Change in EOT (DEOT)
• MOSCAP Threshold Voltage (V_T,CV)
• Average Surface Dopant Density (N_SURF)
• Effective Oxide Charge (Q_eff)
• VFB Hysteresis
• DIT Sensitive Conductance Peak (G_PEAK)
• Leakage Current (I_L)                                                                                                                                                           
• Stress Induced Leakage Current (SILC)

Implant
• MOS Capacitor (MOSCAP) Threshold Voltage (V_T,CV)
• Average Surface Dopant Density (N_SURF)

To request information or technical papers click here or write to us at Info@ssm-inc.com.