The SSM 2000 NanoSRP^® System provides high-speed carrier density and resistivity depth profiling using spreading resistance profiling technology (SRP). Information about any silicon process step can be obtained in only 15 minutes from sample preparation through data analysis.

SRP technology provides a direct measurement of the resistivity and carrier density profiles of electrically active dopants – the same electrical properties that determine device performance. The SSM 2000 features a dynamic range in carrier density measurements from < 10¹¹ cm-³ to the dopant solid solubility limit, and a spatial resolution in depth profiling on the order of 1 nm. This range enables full electrical characterization of 130 nm technology process steps and beyond.

SSM 2000 Features
• 1 nm depth resolution
• Multiple profiling on up to six samples
• Automatic sample alignment and probe placement
• Automatic probe calibration and conditioning
• Automatic bevel angle measurement
• User-friendly analysis software

To request information or technical papers, click here or write to us at info@ssm-inc.com.