The SSM 6200 FastGate^® Advanced Gate Dielectric Metrology System measures a variety of electrical oxide and dielectric characteristics in-line, at high speed, on production wafers. Capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick can be measured with high precision.  A wide range of current voltage (IV) measurements including leakage current, TDDB, and SILC are included. The SSM 6200 includes a class 1 mini-environment, advanced elastic metal gate (EM-gate) probe, pattern recognition, full automation, and more.  The SSM 5200 makes the same measurements but off-line on monitor wafers.

SSM FastGate Systems use a small elastic probe to form a temporary gate on the dielectric surface. An integrated pattern recognition system locates scribe line test areas. The elastic probe has a diameter of less than 30 nm and does not damage the dielectric surface.

SSM 6200 features
• Wafer diameter up to 300 mm
• Measures in test areas or scribe lines etched in product wafers
• Dual load ports with SMIF, FOUP, and open cassette configurations
• Ballroom and bulkhead mount versions
• Industry standard SECS/GEM communications available

Measurement parameters
• Capacitive Effective Thickness (CET)
• Equivalent Oxide Thickness (EOT)
• Leakage Current (IL)
• Interface State Density (Dit)
• Flatband Voltage (Vfb)
• Effective Oxide Charge (Qeff)
• Threshold Voltage (VT)
• High-k Dielectric Constant (k)
• Stress Induced Leakage Current (SILC)

To request information or technical papers click here or write to us at info@ssm-inc.com.